View ST203S_1317324.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

Previous Datasheet
Index
Next Data Sheet
DISCRETE POWER DIODES and THYRISTORS
DATA BOOK
D-470
To Order
Previous Datasheet
Index
Next Data Sheet
Bulletin I25177/B
ST203S SERIES
INVERTER GRADE THYRISTORS Stud Version
Features
All diffused design Center amplifying gate Guaranteed high dv/dt Guaranteed high di/dt High surge current capability Low thermal impedance High speed performance
205A
Typical Applications
Inverters Choppers Induction heating All types of force-commutated converters
Major Ratings and Characteristics
Parameters
IT(AV) @ TC IT(RMS) ITSM @ 50Hz @ 60Hz I2t @ 50Hz @ 60Hz V DRM /V RRM tq range TJ
ST203S
205 85 320 5260 5510 138 126 1000 to 1200 20 to 30 - 40 to 125
Units
A C A A A KA2s KA2s V s C
case style TO-209AB (TO-93)
D-471
To Order
Previous Datasheet
Index
Next Data Sheet
ST203S Series
ELECTRICAL SPECIFICATIONS Voltage Ratings
Voltage Type number Code V DRM /V RRM , maximum repetitive peak voltage V
10 ST203S 12 1200 1300 1000
VRSM , maximum non-repetitive peak voltage V
1100
I DRM /I RRM max.
@ TJ = TJ max.
mA
40
Current Carrying Capability
Frequency
180 el 50Hz 400Hz 1000Hz 2500Hz Recovery voltage Vr Voltage before turn-on Vd Rise of on-state current di/dt Case temperature Equivalent values for RC circuit 580 570 520 370 50 V DRM 50 60
o
ITM 180 el 400 380 320 210 50 50 85 900 940 930 780 50 V DRM 60
o
ITM 100s 640 650 630 510 50 85 6180 2980 1730 890 50 V DRM 60
ITM
Units
4680 2150 1200 580 50 85 V A/s C A
47 / 0.22F
47 / 0.22F
47 / 0.22F
On-state Conduction
Parameter
I T(AV) Max. average on-state current @ Case temperature I T(RMS) Max. RMS on-state current I TSM Max. peak, one half cycle, non-repetitive surge current
ST203S
205 85 320 5260 5510 4420 4630
Units
A C
Conditions
180 conduction, half sine wave
DC @ 76C case temperature t = 10ms A t = 8.3ms t = 10ms t = 8.3ms t = 10ms t = 8.3ms KA2s t = 10ms t = 8.3ms KA2s No voltage reapplied 100% VRRM reapplied No voltage reapplied 100% VRRM reapplied Sinusoidal half wave, Initial TJ = TJ max
I2 t
Maximum I2t for fusing
138 126 98 89
I 2 t
Maximum I2t for fusing
1380
t = 0.1 to 10ms, no voltage reapplied
D-472
To Order
Previous Datasheet
Index
Next Data Sheet
ST203S Series
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
Fig. 3 - On-state Power Loss Characteristics
Fig. 4 - On-state Power Loss Characteristics
D-476
To Order
Previous Datasheet
Index
Next Data Sheet
ST203S Series
Fig. 5 - Maximum Non-repetitive Surge Current
Fig. 6 - Maximum Non-repetitive Surge Current
Fig. 7 - On-state Voltage Drop Characteristics
Fig. 8 - Thermal Impedance ZthJC Characteristic
Fig. 9 - Reverse Recovered Charge Characteristics
Fig. 10 - Reverse Recovery Current Characteristics
D-477
To Order
Previous Datasheet
Index
Next Data Sheet
ST203S Series
Fig. 11 - Frequency Characteristics
Fig. 12 - Frequency Characteristics
Fig. 13 - Frequency Characteristics
D-478
To Order
Previous Datasheet
Index
Next Data Sheet
ST203S Series
Fig. 14 - Maximum On-state Energy Power Loss Characteristics
Fig. 15 - Gate Characteristics
D-479
To Order
Previous Datasheet
Index
Next Data Sheet
ST203S Series
On-state Conduction
Parameter
V TM Max. peak on-state voltage
ST203S
1.72 1.17 1.20 0.92
Units
Conditions
ITM= 600A, TJ = TJ max, t = 10ms sine wave pulse
p
V T(TO)1 Low level value of threshold voltage V T(TO)2 High level value of threshold voltage r r
t1
V
(16.7% x x IT(AV) < I < x IT(AV)), TJ = TJ max. (I > x I ), TJ = TJ max.
T(AV)
Low level value of forward slope resistance High level value of forward slope resistance Maximum holding current Typical latching current
m 0.87 600 1000 mA
(16.7% x x IT(AV) < I < x IT(AV)), TJ = TJ max. (I > x I
T(AV)
t2
), TJ = TJ max.
IH IL
T J = 25C, I T > 30A T J = 25C, V A= 12V, Ra = 6, I G = 1A
Switching
Parameter
di/dt Max. non-repetitive rate of rise of turned-on current t
d
ST203S
1000 0.79 Min 20 Max 30
Units
A/s
Conditions
TJ = TJ max, VDRM = rated VDRM ITM = 2 x di/dt TJ = 25C, VDM = rated VDRM, ITM = 50A DC, t = 1s
p
Typical delay time
s
Resistive load, Gate pulse: 10V, 5 source TJ = TJ max, ITM = 300A, commutating di/dt = 20A/s VR = 50V, t = 500s, dv/dt: see table in device code
p
t
q
Max. turn-off time
Blocking
Parameter
dv/dt IRRM IDRM Maximum critical rate of rise of off-state voltage Max. peak reverse and off-state leakage current
ST203S
500 40
Units
V/s mA
Conditions
TJ = TJ max., linear to 80% VDRM, higher value available on request TJ = TJ max, rated V DRM/V RRM applied
Triggering
Parameter
PGM Maximum peak gate power
ST203S
60 10 10 20
Units
W A
Conditions
TJ = TJ max, f = 50Hz, d% = 50 TJ = TJ max, t 5ms
p
PG(AV) Maximum average gate power IGM +VGM -VGM IGT VGT IGD VGD Max. peak positive gate current Maximum peak positive gate voltage Maximum peak negative gate voltage Max. DC gate current required to trigger Max. DC gate voltage required to trigger Max. DC gate current not to trigger Max. DC gate voltage not to trigger
V 5 200 3 20 0.25 mA
TJ = TJ max, t 5ms
p
TJ = 25C, VA = 12V, Ra = 6 V mA V TJ = TJ max, rated VDRM applied
D-473
To Order
Previous Datasheet
Index
Next Data Sheet
ST203S Series
Thermal and Mechanical Specifications
Parameter
TJ T
stg
ST203S
-40 to 125 -40 to 150 0.105 0.04 31 (275) 24.5 (210)
Units
C
Conditions
Max. junction operating temperature range Max. storage temperature range Max. thermal resistance, junction to case Max. thermal resistance, case to heatsink Mounting torque, 10%
RthJC RthCS T
DC operation K/W Nm (Ibf-in) Nm (Ibf-in) g See Outline Table Non lubricated threads Lubricated threads Mounting surface, smooth, flat and greased
wt
Approximate weight Case style
280
TO-209AB (TO-93)
RthJC Conduction
(The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC)
Conduction angle
180 120 90 60 30
Sinusoidal conduction
0.016 0.019 0.025 0.036 0.060
Rectangular conduction Units
0.012 0.020 0.027 0.037 0.060 K/W
Conditions
TJ = TJ max.
Ordering Information Table
Device Code
ST
1
20
2
3
3
S
4
12
5
P
6
F
7
J
8
0
9 10
1 2 3 4 5 6 7 8 9
- Thyristor - Essential part number - 3 = Fast turn off - S = Compression bonding Stud - Voltage code: Code x 100 = VRRM (See Voltage Ratings table) - P = Stud base 3/4" 16UNF-2A M = Stud base metric threads M16/ x 1.5 - Reapplied dv/dt code (for tq test condition) - tq code - 0 = Eyelet terminals (Gate and Aux. Cathode Leads) 1 = Fast-on terminals (Gate and Aux. Cathode Leads) 2 = Flag terminals (For Cathode and Gate Terminals)
t (s)
q
dv/dt - tq combinations available
dv/dt (V/s) 20 25 30 20 CK CJ CH 50 DK DJ DH 100 EK EJ EH 200 -FJ * FH 400 --HH
10 - Critical dv/dt: None = 500V/sec (Standard value) L = 1000V/sec (Special selection)
*Standard part number.
All other types available only on request.
D-474
To Order
Previous Datasheet
Index
Next Data Sheet
ST203S Series
Outline Table
CERAMIC HOUSING
16.5 (0.65) MAX.
N. ( 0 .3 9 .5 7)
8.5 (0.33) DIA. 4.3 (0.17) DIA
2.6 (0.10) MAX.
C.S. 16mm 2 RED SILICON RUBBER 15 7 (6 .1 8) 1 70 (6.69 ) RED CATHODE WHITE GATE C.S. 0.4 mm (.0006 s.i.) 2 (.025 s.i.)
20
(0 .
FLEXIBLE LEAD
79
)M
IN
.
MI
Fast-on Terminals AMP. 280000-1 REF-250
215 (8.46) 70 (2 .7 5) M IN . RED SHRINK 29 (1 .1 4) M A X. WHITE SHRINK
10 (0.39)
22.5 (0.88) MAX. DIA. 1 2.5 (0 .4 9) M A X .
2 1 (0 .8 3)
M A X.
SW 27 1/2"-20UNF-2A 29.5 (1.16) MAX.
Case Style TO-209AB (TO-93)
All dimensions in millimeters (inches)
CERAMIC HOUSING FLAG TERMINALS
22 (0.89) 14 (0.55) DIA. 6.5 (0.25) 1 3 ( 0.5 1 )
8 0 ( 3 .1 5 ) M A X .
1.5 (0.06) DIA.
38 .5 (1 .5 2 ) M A X .
DIA. 27.5 (1.08) MAX.
2 7 .5 (1 .08 ) M A X .
1 6 (0 .63 ) M A X .
Case Style TO-209AB (TO-93) Flag
All dimensions in millimeters (inches)
SW 32
3/4"-16UNF-2A*
*FOR METRIC DEVICE. M16 X 1.5 - LENGHT 21 (0.83) MAX.
3 (0.12)
D-475
To Order

▲Up To Search▲

Price & Availability of ST203S

	To Download ST203S Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .